发明名称 |
HIGH DENSITY LATERAL DMOS AND ASSOCIATED METHOD FOR MAKING |
摘要 |
The present disclosure discloses a lateral DMOS with recessed source contact and method for making the same. The lateral DMOS comprises a recessed source contact which has a portion recessed into a source region to reach a body region of the lateral DMOS. The lateral DMOS according to various embodiments of the present invention may have greatly reduced size and may be cost saving for fabrication.
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申请公布号 |
US2013043534(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201113213011 |
申请日期 |
2011.08.18 |
申请人 |
DISNEY DONALD R.;ZHANG LEI;LI TIESHENG |
发明人 |
DISNEY DONALD R.;ZHANG LEI;LI TIESHENG |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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