发明名称 HIGH DENSITY LATERAL DMOS AND ASSOCIATED METHOD FOR MAKING
摘要 The present disclosure discloses a lateral DMOS with recessed source contact and method for making the same. The lateral DMOS comprises a recessed source contact which has a portion recessed into a source region to reach a body region of the lateral DMOS. The lateral DMOS according to various embodiments of the present invention may have greatly reduced size and may be cost saving for fabrication.
申请公布号 US2013043534(A1) 申请公布日期 2013.02.21
申请号 US201113213011 申请日期 2011.08.18
申请人 DISNEY DONALD R.;ZHANG LEI;LI TIESHENG 发明人 DISNEY DONALD R.;ZHANG LEI;LI TIESHENG
分类号 H01L29/78;H01L21/336 主分类号 H01L29/78
代理机构 代理人
主权项
地址