| 摘要 |
According to one embodiment, a nonvolatile memory device includes a circuit and a memory cell. The circuit outputs a program voltage. The memory cell is programmed data by being applied the program voltage. The circuit outputs the program voltage so as to satisfy the following formulae, in the case of repeating an output of the program voltage n times (n is an integer not less than 3), when the program voltage in the k-th output (k is an integer not less than 2 and not greater than n) is set to Vpgm(k), a constant voltage is set as &Dgr;v1, a time in which the k-th output is continued is set to Tpgm(k), and a constant time is set as &Dgr;t1. Vpgm(k)=Vpgm(k−1)+&Dgr;v1 Tpgm(k)=Tpgm(k−1)+&Dgr;t1
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