发明名称 METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZONE PROCESSING
摘要 A lasing medium having a tailored dopant concentration and a method of fabrication thereof is disclosed. The lasing medium has a single crystal having a continuous body having a selected length, wherein the crystal comprises dopant distributed along the length of the body to define a dopant concentration profile. In one embodiment, the dopant concentration profile results in a uniform heating profile. A method of fabricating a laser crystal having a tailored dopant concentration profile includes arranging a plurality of polycrystalline segments (12) together to form an ingot (10), the polycrystalline segments each having dopant distributed, providing a crystal seed (14) at a first end of the ingot, and moving a heating element (20) along the ingot starting from the first end (16) to a second end (18) of the ingot, the moving heating element creating a moving molten region (22) within the ingot while passing therealong.
申请公布号 WO2013025926(A1) 申请公布日期 2013.02.21
申请号 WO2012US51189 申请日期 2012.08.16
申请人 RAYTHEON COMPANY;BYREN, ROBERT W. 发明人 BYREN, ROBERT W.
分类号 C30B1/08;C30B13/34;C30B33/06 主分类号 C30B1/08
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