The present invention relates to a CMP slurry composition for tungsten polishing containing abrasives and polishing accelerators, wherein the abrasive comprises colloidal silica dispersed in ultrapure water and the polishing accelerator comprises aqueous hydrogen peroxide, ammonium persulfate, and ferric nitrate. The slurry composition does not cause a slurry discoloration problem and can be applied to a CMP process due to having excellent etch selectivity.
申请公布号
WO2013024971(A2)
申请公布日期
2013.02.21
申请号
WO2012KR05397
申请日期
2012.07.06
申请人
UBPRECISION CO., LTD.;PARK, JEA GUN;PARK, JIN HYUNG;LIM, JAE HYUNG;CHO, JONG YOUNG;CHOI, HO;HWANG, HEE SUB
发明人
PARK, JEA GUN;PARK, JIN HYUNG;LIM, JAE HYUNG;CHO, JONG YOUNG;CHOI, HO;HWANG, HEE SUB