SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent characteristics by using an oxide semiconductor having high crystallinity for a channel layer; and provide a semiconductor device which improves flatness of a base film.

SOLUTION: A semiconductor device manufacturing method comprises performing chemical mechanical polishing processing on a base film of a transistor; and performing a plasma treatment after performing chemical mechanical polishing processing to allow center line average roughness Ra75value of the base film to be below 0.1 nm. The manufacturing method further comprises forming an oxide semiconductor layer having high crystallinity on the base film having flatness obtained by a combination of the plasma treatment and the chemical mechanical polishing processing thereby to achieve improvement of characteristics of the semiconductor device.

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