| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a manufacturing method of the same, which can improve reliability. <P>SOLUTION: A semiconductor storage device according to an embodiment comprises: laminates including a laminated plurality of gate electrodes and an insulation film provided between the gate electrodes; and a plurality of memory cells provided in a lamination direction and including semiconductor pillars penetrating the laminate, a charge storage layer provided between the semiconductor pillars and the gate electrode via an air gap, and a block insulation layer provided between the charge storage layers and the gate electrode. In each of the memory cells, a support part for maintaining a distance between the charge storage layer and the semiconductor pillar is provided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
