发明名称 STRUCTURE AND PROCESS OF HEAT DISSIPATION SUBSTRATE
摘要 Structure of a heat dissipation substrate including a metal substrate, a first insulating material, a second insulating material, a first patterned conductive layer and a second patterned conductive layer is provided. The metal substrate has an upper surface and a lower surface opposite to each other, a plurality of first recesses located on the upper surface and a plurality of second recesses located on the lower surface. The first insulating material is provided to fill into the first recesses. The second insulating material is provided to fill into the second recesses. The first patterned conductive layer is disposed on the upper surface of the metal substrate and a portion of the first insulating material. The second patterned conductive layer is disposed on the lower surface of the metal substrate and a portion of the second insulating material.
申请公布号 US2013043016(A1) 申请公布日期 2013.02.21
申请号 US201113293130 申请日期 2011.11.10
申请人 SUBTRON TECHNOLOGY CO., LTD.;SHEN TZU-SHIH 发明人 SHEN TZU-SHIH
分类号 F28F7/00;B21D53/02 主分类号 F28F7/00
代理机构 代理人
主权项
地址