发明名称 DEPOSITION OF POROUS FILMS FOR THERMOELECTRIC APPLICATIONS
摘要 An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
申请公布号 US2013045557(A1) 申请公布日期 2013.02.21
申请号 US201213587325 申请日期 2012.08.16
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;LU XIANFENG;GODET LUDOVIC;HATEM CHRISTOPHER;HAUTALA JOHN 发明人 LU XIANFENG;GODET LUDOVIC;HATEM CHRISTOPHER;HAUTALA JOHN
分类号 H01L21/22 主分类号 H01L21/22
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