发明名称 |
DEPOSITION OF POROUS FILMS FOR THERMOELECTRIC APPLICATIONS |
摘要 |
An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
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申请公布号 |
US2013045557(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201213587325 |
申请日期 |
2012.08.16 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;LU XIANFENG;GODET LUDOVIC;HATEM CHRISTOPHER;HAUTALA JOHN |
发明人 |
LU XIANFENG;GODET LUDOVIC;HATEM CHRISTOPHER;HAUTALA JOHN |
分类号 |
H01L21/22 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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