发明名称 |
Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements |
摘要 |
Structures and methods to enhance cycling endurance of BEOL memory elements are disclosed. In some embodiments, a memory element can include a support layer having a smooth and planar upper surface as deposited or as created by additional processing. A first electrode is formed the smooth and planar upper surface. The support layer can be configured to influence the formation of the first electrode to determine a substantially smooth surface of the first electrode. The memory element is formed over the first electrode having the substantially smooth surface, the memory element including one or more layers of an insulating metal oxide (IMO) operative to exchange ions to store a plurality of resistive states. The substantially smooth surface of the first electrode provides for uniform current densities through unit cross-sectional areas of the IMO. The memory element can include one or more layers of a conductive metal oxide (CMO).
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申请公布号 |
US2013043452(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201113210342 |
申请日期 |
2011.08.15 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION;MEYER RENE;WU JIAN;BREWER JULIE CASPERSON |
发明人 |
MEYER RENE;WU JIAN;BREWER JULIE CASPERSON |
分类号 |
H01L45/00;H01L21/8239 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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