| 摘要 |
<p>Disclosed is a power semiconductor module, comprising an element pair (62), which operates as the positive-side arm of an electricity transformer device; and an element pair (64), which operates as the negative side arm of the electricity transformer device; both of which are configured by inverse-parallel connecting Si-MOSFETs and Si-FWDs. The first and second element pairs (62, 64) are configured as a 2-in-1 module, housed in one power semiconductor module (60A), and are configured to further comprise terminals (S1, D2) that enable a serial connection between the element pairs (62, 64).</p> |
