| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composite semiconductor device that is less likely broken even when a high voltage is applied. <P>SOLUTION: A composite semiconductor device 200 includes a transition body 220 formed on a diode 210. The transition body 220 includes two or more semiconductor layers. The composite semiconductor device 200 also includes a transistor 230 formed on the transition body 220. The diode 210 is connected across the transistor 230 using through-semiconductor vias, external electrical connectors, or a combination of the two. <P>COPYRIGHT: (C)2013,JPO&INPIT |
