发明名称 |
METHODS FOR MANUFACTURING A METAL-OXIDE THIN FILM TRANSISTOR |
摘要 |
Disclosed herein is a method for manufacturing a metal-oxide thin film transistor. The method includes the steps of: (a1) forming a gate electrode on a substrate; (a2) forming a gate insulating layer over the gate electrode; (a3) forming a metal-oxide semiconductor layer having a channel region on the gate insulating layer; (a4) forming a source electrode and a drain electrode on the metal-oxide semiconductor layer, wherein the source electrode is spaced apart from the drain electrode by a gap exposing the channel region; (a5) forming a mobility-enhancing layer on the channel region, wherein the mobility-enhancing layer is not in contact with the source electrode and the drain electrode; and (a6) annealing the metal-oxide semiconductor layer and the mobility-enhancing layer in an environment at a temperature of about 200° C. to 350° C.
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申请公布号 |
US2013045567(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201213572710 |
申请日期 |
2012.08.13 |
申请人 |
E INK HOLDINGS INC.;ZAN HSIAO-WEN;TSAI CHUANG-CHUANG;YEH CHUN-CHENG;CHEN LIANG-HAO |
发明人 |
ZAN HSIAO-WEN;TSAI CHUANG-CHUANG;YEH CHUN-CHENG;CHEN LIANG-HAO |
分类号 |
H01L21/363 |
主分类号 |
H01L21/363 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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