NON-CONTACT MEASUREMENT OF THE DOPANT CONTENT OF SEMICONDUCTOR LAYERS

摘要

A system and method of non-contact measurement of the dopant content of semiconductor material by reflecting infrared (IR) radiation off of the material and splitting the radiation into two beams, passing each beam through pass band filters of differing wavelength ranges, comparing the level of energy passed through each filter and calculating the dopant content by referencing a correlation curve made up of known wafer dopant content for that system.