发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING |
摘要 |
The present application discloses a method of manufacturing a semiconductor structure. According to at least one embodiment, a first etch stop layer is formed over a conductive feature and a substrate, and the conductive feature is positioned over the substrate. A second etch stop layer is formed over the first etch stop layer. A first etch is performed to form an opening in the second etch stop layer, and the opening exposes a portion of the first etch stop layer. A second etch is performed to extend the opening downwardly by removing a portion of the exposed first etch stop layer, and the extended opening exposes a portion of the conductive feature.
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申请公布号 |
US2013043590(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201113212469 |
申请日期 |
2011.08.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;LIN MEI-HSUAN;LIN CHIH-HSUN;CHAO CHIH-KANG;WANG LING-SUNG |
发明人 |
LIN MEI-HSUAN;LIN CHIH-HSUN;CHAO CHIH-KANG;WANG LING-SUNG |
分类号 |
H01L21/768;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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