CAPACITOR AND PREPARATION METHOD THEREOF

摘要

Disclosed are a capacitor and a preparation method thereof. The capacitor employs a low pressure tetraethyl orthosilicate-low pressure silicon nitride-low pressure tetraethyl orthosilicate structure to replace the oxide-nitride-oxide structure of the existing capacitor and has a relatively high unit capacitance value. In addition, when preparing the low pressure tetraethyl orthosilicate-low pressure silicon nitride-low pressure tetraethyl orthosilicate structure, since it is prepared using a low pressure chemical vapor deposition method with a relatively low temperature, the heat produced by the whole process thereof is relatively low, which is insufficient to make the semiconductor device offset or make the gate metal layer or metallized silicon layer peel off. Therefore, the capacitor and preparation method thereof in the present invention can be well applied in the 0.5µm PIP capacitor process or below.