| 摘要 |
The invention relates a novel silicon-based, single-stage solar cell which, instead of the conversion of light in the interior of a semiconductor material drawn from the melt, uses the generation of power within a very thin quantum structure that is applied. The layer sequence itself, as an active absorber, consists of a three-fold hetero structure, which is embedded in the space charge region of a pn junction and uses quantum-mechanical effects. The layer is preferably applied by means of a CVD or similar method. It was possible to measure efficiencies of greater than 30% on small samples on silicon. |
