| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor that uses an oxide semiconductor layer having electrical characteristics required in accordance with applications and to provide a semiconductor device having the transistor. <P>SOLUTION: In a transistor in which a semiconductor layer, a source electrode layer or a drain electrode layer, a gate insulating film, and a gate electrode layer are sequentially stacked on an oxide insulating film, an oxide semiconductor stacked layer, which includes at least two oxide semiconductor layers having different energy gaps from each other and has a mixed region between the stacked oxide semiconductor layers, is used as the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
