METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To prevent thick film growth inhibition of a crystal caused by generation of a polycrystal, in crystal growth having a nonpolar surface and a semipolar surface as main surfaces.

SOLUTION: In this method for producing a group III nitride semiconductor single crystal for growing a group III nitride semiconductor crystal on a base substrate comprising a group III nitride crystal and having a nonpolar surface or a semipolar surface as a main surface, when defining a surface tilted by ±90° from the main surface to the c-axis direction as K-surface, the base substrate having a side surface having a specifically-angled surface to the K-surface is used to thereby solve the problem of the generation of a polycrystal.

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