| 摘要 |
The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.
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