发明名称 FILM FORMATION DEVICE AND FILM FORMATION METHOD
摘要 <p>[Problem] To increase the service life of a quartz resonator used to measure film thickness in a film formation process, and to provide a film formation device and film formation method whereby film thickness can be controlled on the basis of the relationship between the amount of film formation for mixed gas and the amount of film formation for individual material gases when films are formed using a plurality of types of material gases. [Solution] Provided is a film formation device for forming a thin film on a substrate, the film formation device characterized in comprising: a material supply part for supplying a carrier gas and a material gas, the material supply part being capable of decompression; and a head for ejecting the material gas onto the top surface of the substrate; the material supply part and the head being communicated through a material gas supply channel; a branched flow channel for branching from the material gas supply channel being provided to the material gas supply channel; and a measurement device for measuring the amount of film formation of the material gas being connected to the branched flow channel.</p>
申请公布号 WO2013024769(A1) 申请公布日期 2013.02.21
申请号 WO2012JP70225 申请日期 2012.08.08
申请人 TOKYO ELECTRON LIMITED;KAMADA, TOMIKO;HAYASHI, TERUYUKI;ONO, YUJI 发明人 KAMADA, TOMIKO;HAYASHI, TERUYUKI;ONO, YUJI
分类号 C23C14/54;H01L51/50;H05B33/10 主分类号 C23C14/54
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