METHOD FOR INTRODUCING ISOELECTRONIC CENTER INTO SILICON THIN FLIM BY ION IMPLANTATION, AND SILICON LIGHT-EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for introducing an isoelectronic center into a silicon thin film in which the thin film can be mechanically avoided from being damaged.

SOLUTION: In a method for introducing an isoelectronic center into a silicon thin film on an SOI substrate, the silicon thin film is irradiated with impurity atom ions accelerated at high voltage in room temperature. The silicon thin film irradiated with the impurity atom ions in a nitrogen atmosphere is annealed by a rapid thermal annealing method. The silicon thin film is rapidly cooled in the nitrogen atmosphere by the rapid thermal annealing method.

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