| 摘要 |
A diode model and conductive-probe measurements taken at the wafer lever are used to predict the characterization parameters of a semiconductor device manufactured from the wafer. A current-voltage curve (I-V) model that expresses a current-voltage relationship as a function of resistance, ideality factor, and reverse saturation current is fitted to a number of conductive-probe measurement data. The current-voltage curve (I-Vd) for the device is then estimated by subtracting from the (I-V) model the product of current times the resistance produced by fitting the (I-V) model.
|
