发明名称 |
METHOD OF MAKING AN INSULATED GATE SEMICONDUCTOR DEVICE WITH SOURCE-SUBSTRATE CONNECTION AND STRUCTURE |
摘要 |
In one embodiment, a source-down vertical insulated gate field effect transistor includes a source contact that is buried within a trench gate structure. Dopant of a first conductivity type is diffused from the conductive source contact into an adjacent semiconductor layer that has a second and opposite conductivity type to form source regions. A self-aligned metal contact is formed within the trench gate structure to short the source contact and the source regions to an underlying substrate.
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申请公布号 |
US2013043526(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201113210238 |
申请日期 |
2011.08.15 |
申请人 |
IYER DORAI;GRIVNA GORDON M.;PEARSE JEFFREY |
发明人 |
IYER DORAI;GRIVNA GORDON M.;PEARSE JEFFREY |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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