| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition with which a resist pattern having excellent line edge roughness can be produced by an optical lithography technique using an electron beam or EUV as a light exposure source, and to provide a new compound contained in the resist composition. <P>SOLUTION: The following [1] and [2] are provided: [1] a compound represented by formula (I) [in formula, X represents an aliphatic hydrocarbon group or an aromatic hydrocarbon group, R<SP POS="POST">1</SP>, R<SP POS="POST">2</SP>and R<SP POS="POST">3</SP>represent a hydrogen atom, a 1-8C alkyl group or the like, wherein R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>are preferably bonded to each other so as to form an aliphatic hydrocarbon group]; [2] a resist composition containing the compound and an acid generator. <P>COPYRIGHT: (C)2013,JPO&INPIT |
