发明名称 MEMORY WITH FRONT END PRECHARGE
摘要 <P>PROBLEM TO BE SOLVED: To reduce operation power of a digital memory device. <P>SOLUTION: A method, an apparatus and a system (2900) for operating a digital memory device (2904) are provided. The digital memory device (2904) comprising a plurality of memory cells (713) receives a command so as to perform an operation on a pair of memory cells (713). The pair of memory cells (713) contains fewer memory cells than the device (2904) as a whole. The device (2904) performs an operation comprising selectively precharging only a pair of bit lines (709) associated with the pair of memory cells (713) on a front end of the operation, in response to the received command. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013037760(A) 申请公布日期 2013.02.21
申请号 JP20120229226 申请日期 2012.10.16
申请人 S AQUA SEMICONDUCTOR LLC 发明人 RAO G R MOHAN
分类号 G11C11/401;G11C11/4094 主分类号 G11C11/401
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