MANUFACTURING METHOD OF PIEZOELECTRIC FILM ELEMENT, PIEZOELECTRIC FILM ELEMENT, AND PIEZOELECTRIC DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a non-lead piezoelectric film element in which there are few etching residues and reliability in post steps is high when microfabrication is performed by dry etching, a piezoelectric film element, and a piezoelectric device.

SOLUTION: A manufacturing method of a piezoelectric film element 1 includes the steps of: forming a piezoelectric film 5 composed of a non-lead alkaline niobium oxide compound having a perovskite structure represented by the composition formula (K1-xNax)NbO3on a substrate 2; and an etching the piezoelectric film 5 using a low-pressure plasma in an atmosphere including a fluorine-based reactive gas.

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