发明名称 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM
摘要 A pattern forming method comprising: (i) a step of forming a film from a chemical amplification resist composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer, wherein the resist composition contains: (A) a resin, (B) a nonionic compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a crosslinking agent, and (D) a solvent.
申请公布号 US2013045365(A1) 申请公布日期 2013.02.21
申请号 US201213656960 申请日期 2012.10.22
申请人 FUJIFILM CORPORATION;FUJIFILM CORPORATION 发明人 KATO KEITA;TARUTANI SHINJI;KAMIMURA SOU;ENOMOTO YUICHIRO;IWATO KAORU
分类号 G03F7/20;B32B3/30;G03F7/004 主分类号 G03F7/20
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