发明名称 |
Long Wavelength Infrared Superlattice |
摘要 |
An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide antimonide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers.
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申请公布号 |
US2013043459(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201213588749 |
申请日期 |
2012.08.17 |
申请人 |
SVT ASSOCIATES, INC.;CHEN YIQIAO;CHOW PETER |
发明人 |
CHEN YIQIAO;CHOW PETER |
分类号 |
H01L29/15 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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