| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and a system for substrate patterning capable of reducing defects. <P>SOLUTION: By using a lithography technique, a pattern is formed on a radiation sensitive material layer, and a residual developer and/or other materials are removed by rinsing a substrate. Then, a first chemical processing is performed using a first chemical solution, and a second chemical processing is performed using a second chemical solution. The second chemical solution has a chemical composition different from that of the first chemical solution. In one embodiment, the first chemical solution is so selected as to suppress pattern collapse and the second chemical solution is so selected as to suppress pattern deformations such as line edge roughness (LER) and/or line width roughness (LWR). <P>COPYRIGHT: (C)2013,JPO&INPIT |
