| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SiC single crystal manufacturing apparatus capable of suppressing blocking of an effluent pathway over a wider range to grow an SiC single crystal for long time. <P>SOLUTION: In the apparatus, purge gas diffusion introduction members 9 and 10c are disposed in the effluent pathway of an unconverted gas in a material gas 3 to allow a purge gas 15 to be introduced almost all over the purge gas diffusion introduction members 9 and 10c. For example, the purge gas diffusion introduction members 9 and 10c are composed of a porous substance or a fibrous material whose bulk density is 0.7×10<SP POS="POST">3</SP>kg/mm<SP POS="POST">3</SP>. As a result, blocking of the effluent pathway can be suppressed over a wider range, allowing an SiC single-crystal manufacturing apparatus 1 to grow an SiC single crystal for long time. <P>COPYRIGHT: (C)2013,JPO&INPIT |
