发明名称 |
NITRIDE SEMICONDUCTOR TRANSISTOR |
摘要 |
A nitride semiconductor transistor includes a heterojunction layer including a plurality of nitride semiconductor layers having different polarizations, and a gate electrode disposed on the heterojunction layer. An electron current reduction layer having a p-type conductivity is disposed between the heterojunction layer and the gate electrode to pass hole current therethrough and reduce electron current.
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申请公布号 |
US2013043492(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201213658598 |
申请日期 |
2012.10.23 |
申请人 |
PANASONIC CORPORATION;PANASONIC CORPORATION |
发明人 |
TAKIZAWA TOSHIYUKI;UEDA TETSUZO |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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