| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance change memory capable of preventing leakage of a current between the adjacent cells. <P>SOLUTION: A resistance change memory comprises: first wiring; second wiring crossing the first wiring; a first electrode provided in the intersection region between the first wiring and the second wiring and contacting the first wiring; a second electrode contacting the second wiring and facing the first electrode; a resistance change layer provided between the first electrode and the second electrode; and one of a first insulating layer and a first semiconductor layer formed on side portions of the second electrode and forming gaps between the layer and the side portions of the second electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
