发明名称 METHOD AND APPARATUS FOR PRODUCING SILICON
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing silicon, by which high-purity silicon material can be obtained which cannot be obtained just by sintering silicon powder through a spark plasma sintering method, from the silicon powder that contains impurities such as carbon and oxygen. <P>SOLUTION: The method includes: steps S02 to S04 of sintering the silicon powder through the spark plasma sintering method; and steps S11 to S12 of melting the silicon powder thus sintered, in a chamber, thereby producing a melt of high-purity silicon material, for example, a melted silicon having an impurity concentration reduced to the ppm order. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013035712(A) 申请公布日期 2013.02.21
申请号 JP20110172482 申请日期 2011.08.08
申请人 PANASONIC CORP 发明人 UCHIUMI SHOGO;OKAMOTO TADASHI;YAMADA YOSHIO
分类号 C01B33/037 主分类号 C01B33/037
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