| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a mold for imprint capable of precisely forming a high-definition transfer object having a high aspect ratio with high reproducibility to detail. <P>SOLUTION: A semiconductor substrate 10 formed with an etching pattern 15 is subjected to annealing treatment. In the annealing treatment, for instance, the semiconductor substrate 10 formed with the etching pattern 15 is entered in a vacuum chamber 20, the inside of the vacuum chamber 20 is depressurized using a vacuum pump 21 to be brought into a vacuum atmosphere. The semiconductor substrate 10 is heated to a predetermined temperature in the vacuum atmosphere by using a heater 22, and kept for a predetermined period. <P>COPYRIGHT: (C)2013,JPO&INPIT |
