发明名称 REFERENCE CELL CIRCUIT AND VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE INCLUDING THE SAME
摘要 Included are reference cells each including a variable resistance element which reversibly changes between a predetermined low resistance state LR and a predetermined high resistance state HR according to an application of an electric signal, a comparator which compares resistance values of the reference cells, a pulse generation circuit which generates an electric signal for setting the reference cells to LR or HR, and a control circuit which controls operations where application of the generated electric signal to one of the reference cells corresponding to a comparison result of the comparator and application of a new electric signal generated by the pulse generation circuit to one of the reference cells corresponding to a new comparison result of the comparator are repeated, and then one of the reference cells corresponding to a final comparison result of the comparator is connected to an output terminal.
申请公布号 US2013044535(A1) 申请公布日期 2013.02.21
申请号 US201213634292 申请日期 2012.04.12
申请人 SHIMAKAWA KAZUHIKO 发明人 SHIMAKAWA KAZUHIKO
分类号 G11C11/21 主分类号 G11C11/21
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