MEMORY ARRAY INCLUDING MAGNETIC RANDOM ACCESS MEMORY CELLS AND OBLIQUE FIELD LINES
摘要
A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.
申请公布号
WO2013025597(A1)
申请公布日期
2013.02.21
申请号
WO2012US50554
申请日期
2012.08.13
申请人
CROCUS TECHNOLOGY, INC.;CAMBOU, BERTRAND F.;LEE, DOUGLAS J.;TETHER, ANTHONY JOHN;HOBERMAN, BARRY
发明人
CAMBOU, BERTRAND F.;LEE, DOUGLAS J.;TETHER, ANTHONY JOHN;HOBERMAN, BARRY