发明名称 |
AN ULTRA LOW POWER SRAM CELL CIRCUIT WITH A SUPPLY FEEDBACK LOOP FOR NEAR AND SUB THRESHOLD OPERATION |
摘要 |
An SRAM memory cell with an internal supply feedback loop is provided herein. The memory cell includes a latch that has a storage node Q, a storage node QB, a supply node, and a ground node. The supply node is coupled via a gating device to a supply voltage and ground node is connected to ground. In addition, storage node Q is fed back via feedback loop into a control node of the gating device. In operation, writing into the memory cell may be carried out in a similar manner to dual port SRAM cells, utilizing one or two write circuitries and for writing into storage node Q and storage node QB respectively. Differently from standard SRAM cells, the feedback loop, by controlling the gating device is configured to weaken the write contention. |
申请公布号 |
WO2012153257(A3) |
申请公布日期 |
2013.02.21 |
申请号 |
WO2012IB52264 |
申请日期 |
2012.05.07 |
申请人 |
BEN-GURION UNIVERSITY OF THE NEGEV RESEARCH AND DEVELOPMENT AUTHORITY;TEMAN, ADAM;PERGAMENT, LIDOR;COHEN, OMER;FISH, ALEXANDER |
发明人 |
TEMAN, ADAM;PERGAMENT, LIDOR;COHEN, OMER;FISH, ALEXANDER |
分类号 |
G11C11/22;G11C11/00 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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