MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film transistor which is excellent in electric characteristics and does not increase the number of processes when gate electrodes are provided above and below a channel formation region of the thin film transistor through gate insulation films for controlling a threshold voltage of the thin film transistor.

SOLUTION: When a second gate electrode 133 is formed which is to be provided above an oxide semiconductor layer 131, the second gate electrode 133 is formed concurrently with patterning of the oxide semiconductor layer 131. The manufacturing method prevents the increase of the number of processes required for manufacturing the second gate electrode 133.

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