发明名称 DETECTION OF SURFACE DEFECTS BY OPTICAL INLINE METROLOGY DURING Cu-CMP PROCESS
摘要 An efficient method of detecting defects in metal patterns on the surface of wafers. Embodiments include forming a metal pattern on each of a plurality of wafers, polishing each wafer, and analyzing the surface of the metal pattern on each polished wafer for the presence of defects in the metal pattern by analyzing an optical across-wafer endpoint signal, generated at the endpoint of polishing. Embodiments include determining the location of defects in the metal pattern by determining the position of non-uniformities in the optical-across-wafer endpoint signal.
申请公布号 US2013045546(A1) 申请公布日期 2013.02.21
申请号 US201113210514 申请日期 2011.08.16
申请人 GLOBALFOUNDRIES INC.;SCHLICKER MIKE 发明人 SCHLICKER MIKE
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址