| 摘要 |
A semiconductor processing composition and method for removing photoresist, polymeric materials, etching residues and copper oxide from a substrate comprising copper, low-k dielectric material and TiN, TiNxOy or W wherein the composition includes water, a Cu corrosion inhibitor, at least one halide anion selected from Cl− or Br−, and, where the metal hard mask comprises TiN or TiNxOy, at least one hydroxide source.
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