发明名称 NON-VOLATILE MEMORY BANK AND PAGE BUFFER THEREFOR
摘要 A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. Each half of the memory bank is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density.
申请公布号 US2013044543(A1) 申请公布日期 2013.02.21
申请号 US201213618022 申请日期 2012.09.14
申请人 MOSAID TECHNOLOGIES INCORPORATED;KIM JIN-KI 发明人 KIM JIN-KI
分类号 G11C16/04 主分类号 G11C16/04
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