发明名称 |
INGOT GROWING APPARATUS AND METHOD OF MANUFACTURING INGOT |
摘要 |
Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened. |
申请公布号 |
WO2013025024(A2) |
申请公布日期 |
2013.02.21 |
申请号 |
WO2012KR06415 |
申请日期 |
2012.08.10 |
申请人 |
LG SILTRON INC.;AHN, JIN-WOO;KIM, BONG-WOO;CHOI, IL-SOO;KIM, DO-YEON |
发明人 |
AHN, JIN-WOO;KIM, BONG-WOO;CHOI, IL-SOO;KIM, DO-YEON |
分类号 |
C30B15/04;C30B15/32;C30B29/06;H01L21/02 |
主分类号 |
C30B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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