发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
摘要 |
A plasma processing apparatus which can adjust ion energy on a wafer to a value in a desired range to perform machining with high precision or processing stably for a long time is provided. To the plasma processing apparatus which processes a wafer mounted on a mounting surface of an upper portion of a stage using plasma formed in a processing chamber while supplying radio frequency power from a power supply to an electrode disposed in the stage a detector disposed on an outer circumferential side of the mounting surface of the stage to detect a differential component Vpp between the maximum value and the minimum value and a DC component Vdc from a value of a bias voltage formed thereabove and a controller to adjust an output of the radio frequency bias power to make a value of Vpp/2+|Vdc| constant based on an output from the detector are provided. |
申请公布号 |
US2013045604(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201113235666 |
申请日期 |
2011.09.19 |
申请人 |
MAEDA KENJI;ITOU ATSUSHI;IZAWA MASARU |
发明人 |
MAEDA KENJI;ITOU ATSUSHI;IZAWA MASARU |
分类号 |
H01L21/3065;C23F1/08 |
主分类号 |
H01L21/3065 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|