发明名称 DATA STORAGE FOR VOLTAGE DOMAIN CROSSINGS
摘要 <p>According to an embodiment, an apparatus includes a data storage device. Data to be stored in the data storage device is level shifted from a first voltage domain to a second voltage domain prior to being stored within the data storage device. The data storage device is powered by the second voltage domain. The apparatus further includes a circuit that is powered by the second voltage domain and that is responsive to data output by the data storage device.</p>
申请公布号 WO2013025637(A1) 申请公布日期 2013.02.21
申请号 WO2012US50641 申请日期 2012.08.13
申请人 QUALCOMM INCORPORATED;KOOB, CHRISTOPHER EDWARD;LIN, JEN TSUNG;PYLA, MANOJKUMAR;SAINT-LAURENT, MARTIN 发明人 KOOB, CHRISTOPHER EDWARD;LIN, JEN TSUNG;PYLA, MANOJKUMAR;SAINT-LAURENT, MARTIN
分类号 G06F5/06 主分类号 G06F5/06
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