发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for reducing risk of wire short-circuit and wire displacement. <P>SOLUTION: A semiconductor device 10 has: a wiring substrate 12 having first and second connection pads 124 and 125 on a principal surface; a first semiconductor chip 14 having a first electrode pad 141; a second semiconductor chip 16 having a second electrode pad 161 with a size smaller than that of the first electrode pad 141; a first wire 22 connecting between the first electrode pad 141 and the first connection pad 124; and a second wire 24 connecting between the second electrode pad 161 and the second connection pad 125. The first electrode pad 141 is larger than a wide part 241 of the second wire 24, and the second electrode pad 161 is smaller than the wide part 241 of the second wire 24. In the second wire 24, the wide part 241 is connected with the second connection pad 161, and the other end is connected with the second electrode pad 161 via a bump electrode 30. The bump electrode 30 is smaller than the second electrode pad 161. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013038296(A) 申请公布日期 2013.02.21
申请号 JP20110174576 申请日期 2011.08.10
申请人 ELPIDA MEMORY INC 发明人 FUJIWARA MASATOSHI
分类号 H01L21/60;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L21/60
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