| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a single crystal silicon carbide film capable of obtaining a high-quality epitaxial film with few crystal defect and a manufacturing method for a substrate with the single crystal silicon carbide film. <P>SOLUTION: The method for manufacturing the single crystal silicon carbide film 14 including forming the single crystal silicon carbide film 14 on a silicon substrate 11 includes a first process which forms a silicon carbide film 12 on the surface of the silicon substrate 11, a second process which forms a mask material 13 on the surface of the silicon carbide film 12, a third process which forms an opening 13h in the mask material 13 and exposes a part of the silicon carbide film 12, and a fourth process which heats the silicon substrate 11 in a gas atmosphere containing a raw material gas, grows a single crystal silicon carbide epitaxially with the silicon carbide film 12 as a basic point, and forms the single crystal silicon carbide film 14 to cover the silicon carbide film 12 and the mask material 13. The pressure of the gas atmosphere containing the raw material gas is ≥5.0×10<SP POS="POST">-4</SP>Pa and ≤0.5 Pa. <P>COPYRIGHT: (C)2013,JPO&INPIT |
