| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable power supply reverse connection protective device which, in a simple circuit configuration though, does not incur a gate breakdown in a semiconductor element for protecting against reverse connection of a power supply, even when the energization of a load containing an inductive component is to be controlled. <P>SOLUTION: The power supply reverse connection protective device includes a DC power supply 10, an energization control semiconductor element 14 for controlling the energization of a glow plug 18, and an overcurrent protection circuit 161. The glow plug 18 contains a parasitic inductance L of a wiring 17 connecting a glow plug 18, a power supply 10, and/or the energization control semiconductor element 14, as an inductive component. A p-channel power MOSFET 11 is disposed on the upstream side of the energization control semiconductor element 14, as a semiconductor element 11 for protecting against reverse connection of power supply, and a gate G<SB POS="POST">11</SB>of the p-channel power MOSFET 11 is grounded via a gate resistor 13 having a prescribed resistance value R<SB POS="POST">G</SB>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
