| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a device structure for larger batch size with uniformity being improved in mass production of chemical vapor deposition (CVD) for growing a crystal film on a substrate, in which sticking of CVD gas to a pump of an exhaust system or to an exhaust piping is reduced by extending a cleaning/replacement cycle of a component of the device for improved consumption efficiency of the CVD gas on the substrate, and further a flow path that crosses a heating space is preferred to be shortened since polymerization reaction occurs in a vapor phase to generate granular dust when organic metal gas is used as CVD gas. <P>SOLUTION: A plurality of susceptors to be heated, on the surface of which a substrate is placed, are arranged radially. While the susceptors arranged radially are rotated, thermal decomposition CVD gas is supplied from an outer periphery so that a CVD film is grown on the substrate. At the center of arrangement of the susceptors arranged radially, an exhaust pipe that can be heated is disposed, for exhausting CVD gas through the exhaust pipe. Thus issues are solved in a vapor growth device for a crystal film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
