发明名称 CONTACTLESS MASK PATTERN EXPOSURE PROCESS AND APPARATUS SYSTEM HAVING VIRTUAL EXTENDED DEPTH OF FOCUS
摘要 Forming a photoresist mask pattern by employing a three-dimensional mask having non-reflective passages. The mask pattern is recorded on a holographic plate to form a holographic pattern. Thereafter, the holographic pattern is spatially reconstructed so as to form a reconstructed radiation mask pattern having a virtual extended depth of focus defined by the mask entrance and exit images which is used to expose a photo-sensitized surface.
申请公布号 US3677634(A) 申请公布日期 1972.07.18
申请号 USD3677634 申请日期 1968.12.23
申请人 INTERN. BUSINESS MACHINES CORP. 发明人 EINAR S. MATHISEN
分类号 G03F7/20;G03H1/00;H01L21/00;H05K3/00;(IPC1-7):G03B27/28 主分类号 G03F7/20
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