发明名称 |
METHOD FOR FORMATION OF NANOSIZED STRUCTURES ON SEMICONDUCTORS SURFACE FOR USAGE IN MICROELECTRONICS |
摘要 |
FIELD: electrical engineering.SUBSTANCE: method for formation of nanosized structures on semiconductors surface for usage in microelectronics includes formation of a monoatomic thickness buffer layer of gold with formation of an orderly 2D underlayer Si(111)-Si(111)-??3×?3-Au, subsequent precipitation of 1-3 fullerene layers of onto the 2D underlayer Si(111)-Si(111)-??3×?3-Au to form a fullerite-like lattice and precipitation of a 0.6 - 1 gold monolayer onto the prepared substrate under extra-high vacuum conditions, the substrate temperature being 20°C.EFFECT: invention enables controllable formation of ultrathin gold nanofilms with the preset electric conductivity value on a semiconductor substrate surface.2 cl, 3 dwg |
申请公布号 |
RU2475884(C1) |
申请公布日期 |
2013.02.20 |
申请号 |
RU20110132687 |
申请日期 |
2011.08.03 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE AVTONOMNOE OBRAZOVATEL'NOE UCHREZHDENIE VYSSHEGO PROFESSIONAL'NOGO OBRAZOVANIJA "DAL'NEVOSTOCHNYJ FEDERAL'NYJ UNIVERSITET" |
发明人 |
SARANIN ALEKSANDR ALEKSANDROVICH;ZOTOV ANDREJ VADIMOVICH;GRUZNEV DIMITRIJ VJACHESLAVOVICH;TSUKANOV DMITRIJ ANATOL'EVICH;BONDARENKO LEONID VLADIMIROVICH;MATETSKIJ ANDREJ VLADIMIROVICH |
分类号 |
H01L21/28;B82B3/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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